 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MA4E2099-1284 High Barrier Silicon Schottky Diodes: Bridge Octoquad Features * * * * * Designed for High Dynamic Range Applications Low Parasitic Capitance and Inductance Low Parasitic Resistance Recommended for DC - 12 GHz Uniform Electrical Characteristics with each junction * Rugged HMIC Construction with Polyimide Scratch Protection M/A-COM Products Rev. V3 ODS-1284 Outline ( Topview ) Description The MA4E2099-1284 Bridge Octoquad is offered for high dynamic range applications. This device is constructed with Silicon High Barrier Schottky Diodes fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process to ensure electrical characteristics uniformity for each junction. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as a low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. Applications The device can be used in high power mixer, detector, and limiter circuits through 12 GHz. DIM INCHES MIN. 0.0285 0.0285 0.0040 0.0035 0.0165 MILLIMETERS MIN. 0.725 0.725 0.102 0.090 0.420 Absolute Maximum Ratings @ +25C 1 Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage RF C.W. Incident Power RF & DC Dissipated Power MAX. 0.0297 0.0297 0.0060 0.0043 0.0173 MAX. 0.755 0.755 0.153 0.110 0.440 A B C D Sq. Value -55C to +150C -55C to +150C 20 mA | -9 V | +25 dBm 100 mW E 1. Exceeding any one of these values may result in permanent damage. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed. product(s) or information contained herein without notice. MA4E2099-1284 High Barrier Silicon Schottky Diodes: Bridge Octoquad M/A-COM Products Rev. V3 Electrical Specifications @ 25C (Measured at Adjacent Ports: 1-2, 2-3, 3-4, 4-1) 2 Part Number Vf @ 1 mA (V) Min. MA4E2099-1284 1.08 Vf @ 10 mA (V) Min. 1.32 Ct @ 0 V (pF) Typ. 0.16 Vb @ 10 uA (V) Min. 9 Rt Slope Resistance (Vf1-Vf2) / (10.5 mA - 9.5 mA) () Max. 16 Max. 1.24 Max. 1.52 2. Rt is the dynamic slope resistance where Rt = Rs + Rj where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance. MA4E2099-1284 Equivalent Circuit MA4E2099-1284 High Barrier SPICE PARAMETERS (Per Diode) Is (nA) 5.7 E-2 Rs () 6 N 1.20 Cj0 (pF) 2.4 E-1 M 0.5 Ik (mA) 4 Vj (V) 8.0 E-2 FC 0.5 BV (V) 5.0 IBV (mA) 1.0 E-2 Ordering Information Part Number MA4E2099-1284W MA4E2099-1284 MA4E2099-1284T Packaging Wafer on Frame Die in Carrier Tape/Reel 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed. product(s) or information contained herein without notice. MA4E2099-1284 High Barrier Silicon Schottky Diodes: Bridge Octoquad Handling and Assembly Procedure All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tip tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. Bulk handling should insure that abrasion and mechanical shock are minimized. The rugged construction of these HMIC devices allows the use of standard handling and die attach techniques. It is important to note however that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky devices having a Class 0 rating. M/A-COM Products Rev. V3 Die Attach Die attach for these devices is made through the use of conventional gold plated die attach technology. A vacuum collet or plastic tweezers are recommended for device placement onto the circuit or ground plane. The device backside metal consists of approximately 0.3 um Ti-Pt-Au. This metallization scheme allows for die attach to hard and soft substrates (for via grounding) and Au plated metal ground planes with 80Au/20Sn and Sn63/ Pb36/Ag2 solders. The maximum time-temperature profile is 300C for 5 seconds. Attachment of die to circuit medium with electrically conductive silver epoxies is also acceptable. Die Bonding Wire and ribbon bonding from the topside bond pads to the circuit can be accomplished with 1 mil dia. gold wire or 1/4 x 3 mil sq. gold ribbon. Ball bonding, wedge bonding, or thermo-compression bonding are all acceptable. The topside of the die is protected with a durable polymer for impact and scratch protection. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for * North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in MA-COM Technical Solutions and its affiliates reserve the right to make changes to the volume is not guaranteed. product(s) or information contained herein without notice. |
Price & Availability of MA4E2099-1284
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |